LOW EXTERNAL RESISTANCE LAST NANOSHEET

Organization Name

International Business Machines Corporation

Inventor(s)

Effendi Leobandung of Stormville NY (US)

Shogo Mochizuki of Mechanicville NY (US)

Andrew M. Greene of Slingerlands NY (US)

Gen Tsutsui of Glenmont NY (US)

LOW EXTERNAL RESISTANCE LAST NANOSHEET

This abstract first appeared for US patent application 18462716 titled 'LOW EXTERNAL RESISTANCE LAST NANOSHEET

Original Abstract Submitted

A semiconductor structure includes a semiconductor structure. The semiconductor structure may include a semiconductor structure. The semiconductor structure may include a first gate with nanosheet layers of high-K metal gate (HKMG) and gate channel, a second gate with nanosheet layers of HKMG and gate channel, a source/drain (S/D) channel having a single continuous material between the first gate and the second gate, and inner spacers between the HKMG and the S/D channel.