18454546. DEVICE AND FORMATION METHOD THEREOF (Taiwan Semiconductor Manufacturing Company, LTD.)
DEVICE AND FORMATION METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, LTD.
Inventor(s)
Yu-Rui Chen of Taichung City (TW)
Yun-Wen Chen of New Taipei City (TW)
Chee-Wee Liu of Taipei City (TW)
DEVICE AND FORMATION METHOD THEREOF
This abstract first appeared for US patent application 18454546 titled 'DEVICE AND FORMATION METHOD THEREOF
Original Abstract Submitted
A device includes a substrate, a semiconductor layer and a ferroelectric layer. The semiconductor layer is over the substrate. The semiconductor layer is a single crystal silicon layer or a single crystal germanium layer. The ferroelectric layer is over the semiconductor layer. The ferroelectric layer is in physical contact with the semiconductor layer and has an orthorhombic phase.