18443729. SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Kouta Tomita of Nonoichi Ishikawa JP
SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18443729 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device includes a first electrode, a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a second electrode, a third electrode, and a fourth electrode. The third electrode is arranged along a boundary between adjacent regions of the plurality of regions. The third electrode is not located at a portion of the boundary most distant to the second electrode. The third electrode faces the second semiconductor layer via an insulating body. The fourth electrode is located on the third semiconductor layer. The fourth electrode is connected to the second semiconductor layer, the third semiconductor layer, and the second electrode. A portion of the fourth electrode located at the most distant portion has a Schottky barrier junction with the first semiconductor layer.