DELAMINATION DETECTION STRUCTURE

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Chi-Hui Lai of Taichung City TW

Yang-Che Chen of Hsin-Chu City TW

Hsiang-Tai Lu of Hsinchu County TW

Wei-Ray Lin of Hsinchu City TW

Tse-Wei Liao of Hsinchu City TW

Ming Jun Li of New Taipei City TW

DELAMINATION DETECTION STRUCTURE

This abstract first appeared for US patent application 18440671 titled 'DELAMINATION DETECTION STRUCTURE

Original Abstract Submitted

A semiconductor includes a first substrate having a device region and a ring region surrounding the device region, a first interconnect structure over the first substrate, the first interconnect structure including a first via tower and a second via tower, a first bonding layer over the first interconnect structure and including a first metal bonding feature, a second bonding layer over the first bonding layer and including a second metal bonding feature in contact with the first metal bonding feature, and a second interconnect structure over the second bonding layer and including a third via tower extending through the second interconnect structure and disposed directly over the ring region. The first via tower is electrically coupled to the second via tower by a first metal line. The first via tower is electrically coupled to the third via tower by the first metal bonding feature and the second metal bonding feature.