LATERAL SPLIT DIGIT LINE MEMORY ARCHITECTURES

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Inventor(s)

LATERAL SPLIT DIGIT LINE MEMORY ARCHITECTURES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18440460 titled 'LATERAL SPLIT DIGIT LINE MEMORY ARCHITECTURES

Simplified Explanation: The patent application describes methods, systems, and devices for lateral split digit line memory architectures, where a memory array includes word line plates separated by pillars that interact with the plates, dielectric piers positioned between the pillars, storage elements, and digit lines.

Key Features and Innovation:

Memory array with lateral split digit line architecture
Word line plates separated by pillars
Dielectric piers positioned between pillars
Storage elements and digit lines coupled with word line plates, pillars, and dielectric material

Potential Applications: This technology could be used in various memory storage devices, such as solid-state drives, computer memory modules, and other electronic devices requiring high-speed data access.

Problems Solved: This technology addresses the need for efficient memory architectures that can store and retrieve data quickly and reliably, improving overall performance of electronic devices.

Benefits:

Faster data access and retrieval
Improved memory storage efficiency
Enhanced overall performance of electronic devices

Commercial Applications: Potential commercial applications include the manufacturing of high-performance solid-state drives, computer memory modules, and other electronic devices requiring fast and reliable data storage capabilities.

Prior Art: Readers interested in prior art related to this technology may explore research papers, patents, and publications in the field of memory storage architectures and semiconductor devices.

Frequently Updated Research: Researchers are constantly exploring new advancements in memory storage technologies, including innovations in lateral split digit line memory architectures.

Questions about lateral split digit line memory architectures: 1. How does the lateral split digit line architecture improve memory storage efficiency? 2. What are the potential challenges in implementing this technology in commercial electronic devices?

Original Abstract Submitted

Methods, systems, and devices for lateral split digit line memory architectures are described. A memory array may include a first set of word line plates separated from a second set of word line plates by a pillar (e.g., that is configured as a digit line) that interact with the first and second set of word line plates. Further, the memory array may include a set of dielectric piers that are positioned between the pillars, where each dielectric pier contacts a first pillar and a second pillar. Additionally, the memory array may include a set of storage elements and a set of digit lines that are each coupled with a word line plate, a pillar, and a dielectric material that is positioned between each first and second pillar of the pairs of pillars.