18435960. PHOTOLITHOGRAPHY PATTERNING METHOD simplified abstract (KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY)
PHOTOLITHOGRAPHY PATTERNING METHOD
Organization Name
KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor(s)
PHOTOLITHOGRAPHY PATTERNING METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18435960 titled 'PHOTOLITHOGRAPHY PATTERNING METHOD
Simplified Explanation
The patterning method described in the abstract involves forming a photoresist pattern on a substrate using two divisional exposures with different exposure energies.
- Forming a first photoresist layer on a substrate
- Performing first divisional exposure with higher energy using a reticle with lines and spaces
- Shifting the reticle and performing second divisional exposure with higher energy to form a photoresist pattern
- Overlapping spatial distributions of the two exposure energies
Potential Applications
This technology could be applied in the semiconductor industry for advanced lithography processes, specifically in the fabrication of integrated circuits.
Problems Solved
This method helps in achieving finer and more precise patterning on substrates, which is crucial for the development of high-performance electronic devices.
Benefits
- Enhanced resolution and accuracy in patterning - Increased efficiency in the manufacturing process - Enables the production of smaller and more complex electronic components
Potential Commercial Applications
"Advanced Lithography Process for Semiconductor Fabrication"
Possible Prior Art
There may be prior art related to similar lithography techniques used in semiconductor manufacturing processes.
Unanswered Questions
How does this method compare to traditional lithography techniques in terms of cost-effectiveness and efficiency?
This article does not provide a direct comparison between this method and traditional lithography techniques in terms of cost-effectiveness and efficiency.
What are the potential challenges or limitations of implementing this patterning method on an industrial scale?
This article does not address the potential challenges or limitations of implementing this patterning method on an industrial scale.
Original Abstract Submitted
A patterning method includes: forming a first photoresist layer on a substrate; performing first divisional exposure on the first photoresist layer with first exposure energy, higher than or equal to threshold energy, using a reticle having lines and spaces of a mask pattern and an exposure apparatus; and shifting the reticle below a line width of the mask pattern and performing second divisional exposure on the first photoresist layer with second exposure energy, higher than or equal to the threshold energy, using the reticle to form a photoresist pattern. A spatial distribution of the first exposure energy may overlap a spatial distribution of the second exposure energy.
