18433964. MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE (KABUSHIKI KAISHA TOSHIBA)
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Ko Hyodo of Nonoichi Ishikawa JP
Daiki Yoshikawa of Kanazawa Ishikawa JP
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18433964 titled 'MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
Original Abstract Submitted
A manufacturing method of a semiconductor device according to an embodiment includes: forming a semiconductor portion including a transistor region and a diode region; forming a first lifetime control region in a lower portion of the semiconductor portion in the diode region, with ion irradiated from an upper side of the semiconductor portion; and forming a second lifetime control region in an upper portion of the semiconductor portion, with ion irradiated through a mask from the upper side of the semiconductor portion, the second lifetime control region being formed simultaneously with the first lifetime control region so as not to overlap with the first lifetime control region.