18428920. ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.)
ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
Inventor(s)
Meng-Sheng Chang of Hsinchu (TW)
ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS
This abstract first appeared for US patent application 18428920 titled 'ANTI-FUSE CELLS WITH BACKSIDE POWER RAILS
Original Abstract Submitted
A device includes a memory cell including a first transistor and a second transistor disposed on a frontside of a substrate, the substrate having a first area and a second area. The memory device includes a first interconnect structure disposed on a backside of the substrate. One S/D terminal of the first transistor is coupled to one S/D terminal of the second transistor, with the other S/D terminal of the second transistor coupled to the first interconnect structure through a first via structure in the first area. The memory device includes second via structures and a third via structure both disposed in the second area and each coupled to the first interconnect structure. The first via structure and the second via structures each have a cross-sectional area that is different from that of the third via structure.