MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

Organization Name

Inventor(s)

Nam Cheol Jeon of Icheon-si Gyeonggi-do KR

Chang Beom Woo of Icheon-si Gyeonggi-do KR

MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

This abstract first appeared for US patent application 18428275 titled 'MEMORY DEVICE AND OPERATING METHOD OF THE MEMORY DEVICE

Original Abstract Submitted

An embodiment of the present disclosure relates to a memory device configured to: apply an erase voltage and a first pass voltage at a first time, apply a turn-on voltage at a second time before a level of the erase voltage increases to a target level, maintain the erase voltage, the first pass voltage, and the turn-on voltage at a third time when the level of the erase voltage equals the target level, and reduce a voltage difference between a memory cell and a word line at a fourth time after the third time.