18422770. MEMORY DEVICE AND OPERATION METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
MEMORY DEVICE AND OPERATION METHOD THEREOF
Organization Name
Inventor(s)
Tae-Kyeong Ko of Suwon-si (KR)
MEMORY DEVICE AND OPERATION METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18422770 titled 'MEMORY DEVICE AND OPERATION METHOD THEREOF
The present disclosure involves methods for operating a memory device with multiple rows of memory cells.
- Receiving an active command for a specific row from a memory controller
- Reading a count from a per-row hammer tracking region of the row
- Updating the count to generate an updated count
- Comparing the updated count with predefined thresholds
- Outputting a target row address based on the comparison result
- Performing a row hammer mitigation operation on the target row
Potential Applications: - Memory devices in electronic devices - Data centers - Cloud computing servers
Problems Solved: - Preventing data corruption due to row hammer effect - Enhancing memory device reliability
Benefits: - Improved data integrity - Extended memory device lifespan - Enhanced overall system performance
Commercial Applications: Title: Advanced Memory Device Operation for Enhanced Data Integrity This technology can be used in various electronic devices, data centers, and cloud computing servers to ensure data integrity and enhance system performance.
Questions about Memory Device Operation: 1. How does the row hammer effect impact memory devices, and how does this technology mitigate it? - The row hammer effect causes data corruption by repeatedly accessing rows of memory cells, leading to bit flips. This technology detects and mitigates the effect by monitoring and updating counts in specific rows to prevent excessive accesses.
2. What are the key features of this memory device operation method? - The method involves tracking counts in rows, comparing them with thresholds, and performing mitigation operations to prevent data corruption.
Original Abstract Submitted
The present disclosure relates to operation methods of a memory device including multiple rows each including multiple memory cells. One example method includes receiving an active command for a first row from a memory controller, reading a first count from a per-row hammer tracking (PRHT) region of the first row, updating the first count to generate a first updated count, comparing the first updated count with one of first and second thresholds to generate a comparison result, wherein when the first row is adjacent to the given row, the first updated count is compared with the first threshold and when the first row is not adjacent to the given row, the first updated count is compared with the second threshold, outputting a target row address based on the comparison result, and performing a row hammer mitigation operation on a row corresponding to the target row address.