18420969. SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN
Organization Name
Inventor(s)
KYUNGHWAN Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN - A simplified explanation of the abstract
This abstract first appeared for US patent application 18420969 titled 'SEMICONDUCTOR DEVICE INCLUDING ACTIVE PATTERN
The semiconductor device described in the abstract includes an active pattern with a vertical active portion and a first bend portion, a gate electrode, an etch stop layer, a dielectric layer, and a contact plug.
- The active pattern has a vertical active portion extending vertically and a first bend portion bent from the upper region of the vertical active portion.
- The gate electrode is spaced apart from the active pattern, with at least a portion facing the vertical active portion.
- The etch stop layer is positioned between the upper surface of the gate electrode and the first bend portion.
- The dielectric layer is located between the active pattern and the gate electrode.
- The contact plug is placed on the etch stop layer and penetrates through the first bend portion.
Potential Applications: - This technology can be used in the manufacturing of advanced semiconductor devices. - It may find applications in the production of high-performance electronic components.
Problems Solved: - Provides a more efficient and precise way to structure semiconductor devices. - Enhances the performance and reliability of electronic components.
Benefits: - Improved functionality and performance of semiconductor devices. - Enhanced precision and reliability in manufacturing processes.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of cutting-edge electronic devices, leading to improved performance and reliability in various industries such as telecommunications, consumer electronics, and automotive.
Questions about the technology: 1. How does the positioning of the etch stop layer contribute to the efficiency of the semiconductor device? - The etch stop layer plays a crucial role in defining the boundaries of the active pattern and ensuring precise etching processes, leading to enhanced device performance. 2. What are the potential implications of using a contact plug that penetrates through the first bend portion in semiconductor devices? - The contact plug allows for efficient electrical connections within the device, improving overall functionality and reliability.
Original Abstract Submitted
A semiconductor device includes an active pattern having a vertical active portion extending in a vertical direction and a first bend portion bent from an upper region of the vertical active portion; a gate electrode spaced apart from the active pattern, wherein at least a portion thereof faces the vertical active portion; an etch stop layer in which at least a portion thereof is disposed between an upper surface of the gate electrode and the first bend portion; a dielectric layer in which at least a portion thereof is disposed between the active pattern and the gate electrode; and a contact plug disposed on the etch stop layer and at least penetrating through the first bend portion.