18414223. SEMICONDUCTOR DEVICE (SAMSUNG ELECTRONICS CO., LTD.)
SEMICONDUCTOR DEVICE
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SEMICONDUCTOR DEVICE
This abstract first appeared for US patent application 18414223 titled 'SEMICONDUCTOR DEVICE
Original Abstract Submitted
A semiconductor device may include a substrate including an active pattern, a device isolation layer defining the active pattern, a channel pattern on the active pattern, a gate electrode on the channel pattern, and a first isolation pattern and a second isolation pattern penetrating the gate electrode. The first isolation pattern may be extended into the device isolation layer, and the second isolation pattern may be provided to penetrate the gate electrode and the device isolation layer and may be extended into an upper portion of the substrate. A level of a bottom surface of the second isolation pattern may be lower than a level of a bottom surface of the device isolation layer.