18410756. THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRWAY STRUCTURES (SK hynix Inc.)
THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRWAY STRUCTURES
Organization Name
Inventor(s)
Sang Hyun Sung of Icheon-si KR
Byung Hyun Jeon of Icheon-si KR
THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRWAY STRUCTURES
This abstract first appeared for US patent application 18410756 titled 'THREE-DIMENSIONAL MEMORY DEVICE HAVING STAIRWAY STRUCTURES
Original Abstract Submitted
A three-dimensional memory device includes first and second isolation patterns extending in a first direction, and adjacent to each other in a second direction intersecting with the first direction; a stack disposed between the first isolation pattern and the second isolation pattern, and including a connection region including a plurality of electrode layers and a plurality of interlayer insulating layers alternately stacked in a vertical direction and an insulating region surrounded by the connection region; and a plurality of stairway-shaped recesses configured in the insulating region and the connecting region, and arranged in the first direction, wherein at least one of the plurality of stairway-shaped recesses comprises a first stairway structure connected to the first isolation pattern, a second stairway structure connected to the second isolation pattern, and a sidewall connecting the first stairway structure and the second stairway structure and disposed in the insulating region.