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18409169. MEMORY SYSTEM AND AN OPERATING METHOD THEREOF (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)

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MEMORY SYSTEM AND AN OPERATING METHOD THEREOF

Organization Name

YANGTZE MEMORY TECHNOLOGIES CO., LTD.

Inventor(s)

Shuai Zhang of Wuhan CN

Yaoyao Tian of Wuhan CN

Ya Wang of Wuhan CN

Wei Qi of Wuhan CN

Da Li of Wuhan CN

Wenping Chen of Wuhan CN

MEMORY SYSTEM AND AN OPERATING METHOD THEREOF

This abstract first appeared for US patent application 18409169 titled 'MEMORY SYSTEM AND AN OPERATING METHOD THEREOF

Original Abstract Submitted

A memory system comprises: a memory device including a first word line; and a memory controller coupled to the memory device and configured to: acquire the number of read failure bits of a memory cell page coupled to the first word line; determine whether the number of read failure bits of the memory cell page is greater than a preset threshold; and control the memory device to perform a reprogram operation on the memory cell page in response to the number of read failure bits of the memory cell page being greater than the preset threshold.

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