18405063. MEMORY SYSTEM AND OPERATION METHOD THEREOF (YANGTZE MEMORY TECHNOLOGIES CO., LTD.)
MEMORY SYSTEM AND OPERATION METHOD THEREOF
Organization Name
YANGTZE MEMORY TECHNOLOGIES CO., LTD.
Inventor(s)
MEMORY SYSTEM AND OPERATION METHOD THEREOF
This abstract first appeared for US patent application 18405063 titled 'MEMORY SYSTEM AND OPERATION METHOD THEREOF
Original Abstract Submitted
Examples provide a memory system including a memory device having a plurality of memory pages and a memory controller. The memory controller is coupled with the memory device and configured to: send a first command that indicates to perform a read operation on the data in a target memory page at a first read voltage; obtain a first value and a second value read from the target memory page, the read data being the first value when the threshold voltage of a memory cell is lower than the first read voltage, and the read data being the second value when the threshold voltage of the memory cell is larger than the first read voltage; obtain the difference between a number of the first value and a number of the second value; and determine whether the first read voltage is the target read voltage according to the difference.