18404542. PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION simplified abstract (Micron Technology, Inc.)
PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION
Organization Name
Inventor(s)
Chao Lin Lee of Singapore (SG)
Rachmat Wibowo of Singapore (SG)
SAMUEL Siswanto of Singapore (SG)
PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18404542 titled 'PLASMA-ASSISTED FILM REMOVAL FOR WAFER FABRICATION
Simplified Explanation
The patent application describes methods, systems, and devices for plasma-assisted film removal for wafer fabrication. It involves in-situ techniques to remove a film from a select portion of a wafer, such as the bevel edge, after forming the film using chemical vapor deposition (CVD).
- The innovation involves using a combination of gases ejected from a gas fixture to selectively remove the film from the bevel edge of the wafer while maintaining the film on other portions.
- This process allows for precise and targeted film removal, improving the quality and efficiency of wafer fabrication.
Key Features and Innovation
- Plasma-assisted film removal for wafer fabrication.
- In-situ techniques for selective film removal from specific portions of the wafer.
- Use of a combination of gases to target the removal of the film from the bevel edge while maintaining it on other areas.
Potential Applications
The technology can be applied in semiconductor manufacturing, specifically in wafer fabrication processes where precise film removal is required.
Problems Solved
The technology addresses the challenge of selectively removing films from specific portions of wafers without affecting other areas, improving the overall quality and efficiency of wafer fabrication processes.
Benefits
- Improved precision in film removal.
- Enhanced efficiency in wafer fabrication.
- Reduction in material wastage.
Commercial Applications
Plasma-Assisted Film Removal Systems for Semiconductor Manufacturing
This technology can be commercialized as a system for semiconductor manufacturers to improve the quality and efficiency of wafer fabrication processes.
Prior Art
There may be prior art related to plasma-assisted film removal techniques in semiconductor manufacturing processes. Researchers can explore academic journals, patent databases, and industry publications for relevant information.
Frequently Updated Research
Researchers in the field of semiconductor manufacturing may be conducting studies on advanced plasma-assisted film removal techniques for wafer fabrication. Stay updated with the latest research in this area for potential advancements in the technology.
Questions about Plasma-Assisted Film Removal
How does plasma-assisted film removal compare to traditional methods of film removal in wafer fabrication?
Plasma-assisted film removal offers more precise and targeted removal compared to traditional methods, leading to improved quality and efficiency in wafer fabrication processes.
What are the potential challenges associated with implementing plasma-assisted film removal systems in semiconductor manufacturing facilities?
Implementing plasma-assisted film removal systems may require specialized equipment and training, as well as considerations for safety and environmental impact.
Original Abstract Submitted
Methods, systems, and devices for plasma-assisted film removal for wafer fabrication are described. The present disclosure provides in-situ techniques for removing a film from a select portion of a wafer, such as a surrounding bevel edge. After forming a film on the wafer using chemical vapor deposition (CVD), the wafer may be raised to a higher position in the chamber for CVD. A combination of gases may be ejected from a gas fixture and directed, respectively, to different portions of the wafer. The combination of gases may react to selectively remove the film from the bevel edge of the wafer and maintain the film on other portions of the wafer.