SEMICONDUCTOR DEVICES WITH EMBEDDED BACKSIDE CAPACITORS

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

SEMICONDUCTOR DEVICES WITH EMBEDDED BACKSIDE CAPACITORS

This abstract first appeared for US patent application 18403326 titled 'SEMICONDUCTOR DEVICES WITH EMBEDDED BACKSIDE CAPACITORS

Original Abstract Submitted

A method of forming a semiconductor device includes: forming a device layer that includes nanostructures and a gate structure around the nanostructures; forming a first interconnect structure on a front-side of the device layer; and forming a second interconnect structure on a backside of the device layer, which includes: forming a dielectric layer along the backside of the device layer using a first dielectric material; forming a first conductive feature and a second conductive feature in the dielectric layer; form an opening in the dielectric layer between the first and the second conductive features; forming a first barrier layer and a second barrier layer along a first sidewall of the first conductive feature and along a second sidewall of the second conductive feature, respectively; and forming a second dielectric material different from the first dielectric material in the opening between the first barrier layer and the second barrier layer.