SEMICONDUCTOR DEVICE AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Company, LTD.

Inventor(s)

Yang-Hsin Shih of Hsinchu (TW)

Kuan-Hsun Wang of Hsinchu (TW)

Chih Hsin Yang of Zhubei City (TW)

SEMICONDUCTOR DEVICE AND METHOD

This abstract first appeared for US patent application 18403146 titled 'SEMICONDUCTOR DEVICE AND METHOD

Original Abstract Submitted

An embodiment includes a device, the device including a first die including a first surface and a second surface opposite the first surface. The first die includes a plurality of through substrate vias (TSVs) exposed from the second surface of the first die. The device also includes a guard ring surrounding the plurality of TSVs. The device also includes a dummy metallization pattern surrounding the guard ring. The device also includes an active metallization pattern connected to active devices in the first die.