Semiconductor Device and Method

Organization Name

Taiwan Semiconductor Manufacturing Company, LTD.

Inventor(s)

Ke-Gang Wen of Hsinchu (TW)

Yu-Bey Wu of Hsinchu (TW)

Liang-Wei Wang of Hsinchu (TW)

Hsin-Feng Chen of Yilan City (TW)

Tsung-Chieh Hsiao of Shetou Township (TW)

Chih Chuan Su of Hsinchu (TW)

Dian-Hau Chen of Hsinchu (TW)

Semiconductor Device and Method

This abstract first appeared for US patent application 18403064 titled 'Semiconductor Device and Method

Original Abstract Submitted

An embodiment is a device including a first die and a substrate including a first surface and a second surface opposite the first surface. The device also includes an active device on the first surface of the substrate. The device also includes a first interconnect structure on the first surface of the substrate. The device also includes a through substrate via extending through the first interconnect structure and the substrate to the second surface of the substrate, the through substrate via being electrically coupled to metallization patterns in the first interconnect structure. The device also includes one or more material-filled trench structures extending from the second surface of the substrate into the substrate, the one or more material-filled trench structures being electrically isolated from the through substrate via.