18398588. Formation of Film Stacks with Active Film Layers (Applied Materials, Inc.)
Formation of Film Stacks with Active Film Layers
Organization Name
Inventor(s)
Lizhong Sun of San Jose CA (US)
Formation of Film Stacks with Active Film Layers
This abstract first appeared for US patent application 18398588 titled 'Formation of Film Stacks with Active Film Layers
Original Abstract Submitted
A method for forming and a film stack for a piezoelectric device includes a first seed layer of aluminum nitride, aluminum oxide, or silicon nitride formed on a substrate, an intermediate film layer formed on the first seed layer at a temperature of approximately 300 degrees Celsius to approximately 400 degrees Celsius where the intermediate film layer includes a first layer of a first material and a second layer of a second material that is different from the first material, a second seed layer of aluminum nitride, aluminum oxide, or silicon nitride formed on the intermediate film layer, and an active film layer with a full width half maximum (FWHM) of 1.2 degrees or less formed on the second seed layer.