PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

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PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18398217 titled 'PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Simplified Explanation: This patent application describes a method for plasma processing that involves monitoring the emission intensity of radicals generated by ionization of a processing gas in a chamber, adjusting the processing conditions to achieve a target emission intensity, and optimizing the plasma processing based on this data.

Acquiring emission intensity of radicals generated by ionization of a processing gas within a chamber
Setting a target emission intensity value
Calculating processing conditions to bring the emission intensity closer to the target value

Key Features and Innovation:

Real-time monitoring of emission intensity for precise control of plasma processing
Adaptive adjustment of processing conditions based on target emission intensity
Enhanced efficiency and accuracy in plasma processing operations

Potential Applications:

Semiconductor manufacturing
Thin film deposition
Surface cleaning and modification processes

Problems Solved:

Inconsistent plasma processing results
Lack of real-time feedback for process optimization
Difficulty in achieving desired emission intensity levels

Benefits:

Improved process control and repeatability
Higher quality and uniformity of processed materials
Reduced processing time and cost

Commercial Applications: Plasma processing equipment manufacturers can integrate this technology to offer more advanced and efficient systems for various industries such as semiconductor, electronics, and materials science.

Questions about Plasma Processing: 1. How does real-time monitoring of emission intensity improve plasma processing efficiency? 2. What are the key advantages of adaptive adjustment of processing conditions based on target emission intensity?

Original Abstract Submitted

A plasma processing method includes (a) acquiring emission intensity of radicals generated by ionization of a processing gas within a chamber by a sensor that detects emission intensity within the chamber, in a plasma processing in which supplying of the processing gas to the chamber and exhausting of inside of the chamber are periodically repeated; (b) acquiring a target setting value of the emission intensity; and (c) calculating a processing condition of the plasma processing which brings the emission intensity closer to the setting value, based on the emission intensity acquired by (a) and the setting value acquired by (b).