18386721. Composite Structures for Semiconductor Process Chambers (Applied Materials, Inc.)
Composite Structures for Semiconductor Process Chambers
Organization Name
Inventor(s)
Tianshu Li of Santa Clara CA US
Yikai Chen of Santa Clara CA US
Aniruddha Pal of Santa Clara CA US
Yao-Hung Yang of Santa Clara CA US
Saurabh M. Chaudhari of Santa Clara CA US
Composite Structures for Semiconductor Process Chambers
This abstract first appeared for US patent application 18386721 titled 'Composite Structures for Semiconductor Process Chambers
Original Abstract Submitted
A method for forming a part for a process chamber incorporates a substrate core in the part. The method may include performing a silicon carbide (SIC) deposition process on a substrate to form a SiC coating of approximately 1 mm to approximately 2 mm on all sides of the substrate to form a composite SiC structure where the substrate is composed of a stack of a plurality of substrates each with a thickness of approximately 1 mm to approximately 2 mm and separating the stack of the plurality of substrates of the composite SiC structure to form multiple composite structures where each multiple composite structure has an SiC coating on a top surface and on all side surfaces and a bottom surface of exposed substrate material.