18386429. VERTICAL MEMORY DEVICES INCLUDING DIVISION PATTERNS simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
VERTICAL MEMORY DEVICES INCLUDING DIVISION PATTERNS
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VERTICAL MEMORY DEVICES INCLUDING DIVISION PATTERNS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18386429 titled 'VERTICAL MEMORY DEVICES INCLUDING DIVISION PATTERNS
Simplified Explanation: The semiconductor device described in the patent application includes gate electrode structures, division patterns, and a memory channel structure. The gate electrode structures consist of gate electrodes arranged on a substrate in a specific orientation. The division patterns separate the gate electrode structures, and the memory channel structure extends through each gate electrode structure.
- The semiconductor device features gate electrode structures with gate electrodes arranged on a substrate.
- Division patterns separate the gate electrode structures on the substrate.
- A memory channel structure extends through each gate electrode structure.
- The gate electrodes are spaced apart in different directions on the substrate.
- The division patterns are located between the gate electrode structures.
- The memory channel structure extends through each gate electrode structure.
Potential Applications: 1. Memory devices 2. Integrated circuits 3. Semiconductor manufacturing
Problems Solved: 1. Efficient organization of gate electrode structures 2. Enhanced memory channel structure design
Benefits: 1. Improved semiconductor device performance 2. Enhanced memory storage capabilities
Commercial Applications: The technology described in the patent application could be utilized in the development of advanced memory devices and integrated circuits, potentially impacting the semiconductor manufacturing industry.
Prior Art: Prior research in the field of semiconductor devices and memory structures may provide valuable insights into similar technologies.
Frequently Updated Research: Researchers in the semiconductor industry may be conducting studies on optimizing gate electrode structures and memory channel designs for improved device performance.
Questions about Semiconductor Devices: 1. How do gate electrode structures impact the performance of semiconductor devices? 2. What are the potential applications of memory channel structures in semiconductor manufacturing?
Original Abstract Submitted
A semiconductor device includes gate electrode structures, a first division pattern, a second division pattern, and a memory channel structure. Each gate electrode structure includes gate electrodes spaced apart from each other on a substrate in a first direction substantially perpendicular to an upper surface of the substrate. Each gate electrode extends in a second direction substantially parallel to the upper surface of the substrate. The gate electrode structures are spaced apart from each other in a third direction substantially parallel to the upper surface and crossing the second direction. The first division pattern extends in the second direction between the gate electrode structures on the substrate. The second division pattern extends in the third direction on the substrate, and is on sidewalls of end portions in the second direction of the gate electrode structures. The memory channel structure extends in the first direction through each gate electrode structure.