18384008. METHOD FOR FABRICATING SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Hyung Dong Kim of Suwon-si (KR)
Young Dae Cho of Suwon-si (KR)
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18384008 titled 'METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
The method for fabricating a semiconductor device involves creating an active pattern on a substrate, stacking sacrificial and semiconductor layers alternately on the active pattern, etching to form a dummy gate and first source/drain trench, etching a sidewall of the sacrificial layer to form a second source/drain trench, adding inner spacer material layers, and etching to form a third source/drain trench.
- Formation of active pattern on substrate
- Stacking sacrificial and semiconductor layers alternately
- Etching to create dummy gate and first source/drain trench
- Etching sidewall of sacrificial layer for second source/drain trench
- Addition of inner spacer material layers
- Etching to form third source/drain trench
Potential Applications: - Semiconductor manufacturing - Integrated circuit fabrication - Electronics industry
Problems Solved: - Improved precision in semiconductor device fabrication - Enhanced performance of semiconductor devices
Benefits: - Higher efficiency in manufacturing process - Increased functionality of semiconductor devices
Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology can revolutionize the semiconductor industry by streamlining the fabrication process and improving the performance of semiconductor devices. The market implications include faster production times, higher quality products, and increased competitiveness in the electronics market.
Questions about Semiconductor Device Fabrication: 1. How does this method improve the precision of semiconductor device fabrication? 2. What are the potential long-term benefits of implementing this advanced fabrication technique?
Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the efficiency and performance of semiconductor devices. Stay updated on the latest advancements in semiconductor fabrication to remain at the forefront of technological innovation.
Original Abstract Submitted
A method for fabricating a semiconductor device includes forming an active pattern on a substrate, forming sacrificial and semiconductor layers alternately stacked on the active pattern, forming a dummy gate and first source/drain trench on one side of the dummy gate by etching the stacked structure, forming a second source/drain trench on the active pattern by etching a sidewall of the sacrificial layer exposed to the first source/drain trench, forming a first inner spacer material layer along sidewall and bottom surfaces of the second source/drain trench, forming a second inner spacer material layer by anisotropic etching a first inner spacer material layer, and forming a third source/drain trench on the active pattern by isotropic etching.