18381555. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
This abstract first appeared for US patent application 18381555 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Original Abstract Submitted
A semiconductor device includes a MEOL structure and a BEOL structure. The BEOL structure is formed over the MEOL structure and includes a first dielectric layer, a spacer and a conductive portion. The first dielectric layer has a lateral surface and a recess, wherein the recess is recessed with respect to the lateral surface. The spacer is formed the lateral surface and covers an opening of the recess. The conductive portion is formed adjacent to the spacer.