RESIST COMPOSITION AND PATTERN FORMING PROCESS

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RESIST COMPOSITION AND PATTERN FORMING PROCESS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18380852 titled 'RESIST COMPOSITION AND PATTERN FORMING PROCESS

Simplified Explanation: The patent application describes a resist composition with a base polymer containing repeat units bonded to a sulfonic acid anion and a sulfonium cation.

Key Features and Innovation:

The resist composition includes a base polymer with a unique salt structure.
The salt structure consists of a sulfonic acid anion and a sulfonium cation.
The sulfonium cation has a specific formula (1) as described in the patent application.

Potential Applications: The technology can be used in the semiconductor industry for photolithography processes.

Problems Solved: The technology addresses the need for improved resist compositions with enhanced properties for semiconductor manufacturing.

Benefits: The resist composition offers better performance and resolution in photolithography processes, leading to higher quality semiconductor devices.

Commercial Applications: The technology can be applied in the production of advanced semiconductor devices, leading to improved performance and reliability in electronic products.

Prior Art: Readers can explore prior research on resist compositions in the semiconductor industry to understand the evolution of similar technologies.

Frequently Updated Research: Stay informed about the latest advancements in resist compositions and semiconductor manufacturing processes to enhance the application of this technology.

Questions about Resist Composition Technology: 1. What are the key components of the resist composition technology?

  - The resist composition technology includes a base polymer with unique salt structures containing sulfonic acid anions and sulfonium cations.

2. How does the resist composition technology improve semiconductor manufacturing processes?

  - The resist composition technology enhances performance and resolution in photolithography processes, leading to higher quality semiconductor devices.

Original Abstract Submitted

A resist composition comprising a base polymer containing repeat units (a) having a salt structure containing a sulfonic acid anion bonded to a polymer backbone and a sulfonium cation having formula (1).