18379667. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Ke-Ting Chen of Tainan City TW
Ching-Ling Lin of Kaohsiung City TW
Wen-An Liang of Tainan City TW
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
This abstract first appeared for US patent application 18379667 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Original Abstract Submitted
A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a contact etch stop layer (CESL) adjacent to the metal gate, and an interlayer dielectric (ILD) layer around the gate structure, performing a first etching process to remove the ILD layer, performing a second etching process to remove the CESL for forming a first contact hole, and then forming a first contact plug in the first contact hole. Preferably, a width of the first contact plug adjacent to the CESL is less than a width of the first contact plug under the CESL.
