18378312. HIGH ELECTRON MOBILITY TRANSISTOR (GlobalFoundries U.S. Inc.)
HIGH ELECTRON MOBILITY TRANSISTOR
Organization Name
Inventor(s)
Brett T. Cucci of Colchester VT US
Jacob M. Deangelis of Burlington VT US
Spencer H. Porter of Colchester VT US
Trevor S. Wills of South Burlington VT US
Mark D. Levy of Williston VT US
HIGH ELECTRON MOBILITY TRANSISTOR
This abstract first appeared for US patent application 18378312 titled 'HIGH ELECTRON MOBILITY TRANSISTOR
Original Abstract Submitted
The present disclosure relates to semiconductor structures and, more particularly, to high electron mobility transistors and methods of manufacture. The structure includes: a semiconductor substrate; a gate structure on the semiconductor substrate; a gate metal connecting to the gate structure; and a field plate connected to a source region of the gate structure. The gate metal and the field plate include a same material.