SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chia-Wei Su of Hsinchu TW

Hsin-Ping Chen of Hsinchu TW

Yung-Hsu Wu of Hsinchu TW

Li-Ling Su of Hsinchu TW

Chan-Yu Liao of Hsinchu TW

Shao-Kuan Lee of Hsinchu TW

Ting-Ya Lo of Hsinchu TW

Hsin-Yen Huang of Hsinchu TW

Hsiao-Kang Chang of Hsinchu TW

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

This abstract first appeared for US patent application 18377513 titled 'SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Original Abstract Submitted

The semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a first dielectric layer, a first metal layer, a second metal layer, a first etching stop layer, a second etching stop layer, a second dielectric layer, a first via and a second via. The first metal layer and the second metal are embedded in the first dielectric layer. The first etching stop layer is disposed on the first dielectric layer. The second etching stop layer is disposed on the first etching stop layer. The second dielectric layer is disposed on the second etching stop layer. The first via and the second via are embedded in the second dielectric layer. A width of the second etching stop layer is smaller a width of the first etching stop layer.