18376668. HIGH-ELECTRON-MOBILITY TRANSISTOR (GlobalFoundries U.S. Inc.)
HIGH-ELECTRON-MOBILITY TRANSISTOR
Organization Name
Inventor(s)
Mark D. Levy of Williston VT US
Johnatan A. Kantarovsky of South Burlington VT US
Michael J. Zierak of Colchester VT US
Santosh Sharma of Austin TX US
Steven J. Bentley of Menands NY US
HIGH-ELECTRON-MOBILITY TRANSISTOR
This abstract first appeared for US patent application 18376668 titled 'HIGH-ELECTRON-MOBILITY TRANSISTOR
Original Abstract Submitted
The present disclosure relates to semiconductor structures and, more particularly, to a high-electron-mobility transistor and methods of manufacture. The structure includes: a semiconductor substrate; at least one insulator film over the semiconductor substrate, the at least one insulator film including a recess; and a field plate extending into the at least one recess and over the at least one insulator film.