18376057. SEAM-FREE SINGLE OPERATION AMORPHOUS SILICON GAP FILL (Applied Materials, Inc.)
SEAM-FREE SINGLE OPERATION AMORPHOUS SILICON GAP FILL
Organization Name
Inventor(s)
Praket Prakash Jha of San Jose CA US
Shuchi Sunil Ojha of Sunnyvale CA US
Jingmei Liang of San Jose CA US
SEAM-FREE SINGLE OPERATION AMORPHOUS SILICON GAP FILL
This abstract first appeared for US patent application 18376057 titled 'SEAM-FREE SINGLE OPERATION AMORPHOUS SILICON GAP FILL
Original Abstract Submitted
Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate including one or more features may be housed within the processing region. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming plasma effluents of the silicon-containing precursor and the hydrogen-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The silicon-containing material may extend into the one or more features.