18374524. SEMICONDUCTOR DEVICES AND FABRICATING METHODS THEREOF (Yangtze Memory Technologies Co., Ltd.)
SEMICONDUCTOR DEVICES AND FABRICATING METHODS THEREOF
Organization Name
Yangtze Memory Technologies Co., Ltd.
Inventor(s)
SEMICONDUCTOR DEVICES AND FABRICATING METHODS THEREOF
This abstract first appeared for US patent application 18374524 titled 'SEMICONDUCTOR DEVICES AND FABRICATING METHODS THEREOF
Original Abstract Submitted
Three-dimensional (3D) semiconductor devices and fabricating methods are provided. In some implementations, a disclosed semiconductor device comprises a plurality of vertical transistors, each comprising: a semiconductor layer having a leakage value lower than a pico-ampere and comprising a vertical semiconductor portion and at least one lateral semiconductor portion, a gate dielectric layer comprising a vertical gate dielectric portion on the vertical semiconductor portion and extending in the vertical direction, a gate electrode on the gate dielectric layer and separated from the semiconductor layer by the gate dielectric layer. The disclosed semiconductor device further comprises a plurality of capacitors each coupled with the semiconductor layer of a corresponding one of the plurality of vertical transistors.