18374517. SEMICONDUCTOR DEVICE WITH SELF-ALIGNED NITRIDE FOR POWER ISOLATION (TEXAS INSTRUMENTS INCORPORATED)
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED NITRIDE FOR POWER ISOLATION
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Gowrisankar Damarla of Lehi UT US
SEMICONDUCTOR DEVICE WITH SELF-ALIGNED NITRIDE FOR POWER ISOLATION
This abstract first appeared for US patent application 18374517 titled 'SEMICONDUCTOR DEVICE WITH SELF-ALIGNED NITRIDE FOR POWER ISOLATION
Original Abstract Submitted
A method of forming an integrated circuit includes forming a first trench that extends into the semiconductor substrate. A silicon nitride layer is deposited over the semiconductor substrate. The silicon nitride layer extends into the first trench. A second trench is formed that extends through the silicon nitride layer into the semiconductor substrate. The second trench is spaced apart from the first trench. An oxide layer is formed that fills the second trench. The silicon nitride layer outside the first trench is removed.