18372130. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Kuo-Hsing Lee of Hsinchu County (TW)
Sheng-Yuan Hsueh of Tainan City (TW)
Yung-Chen Chiu of Taichung City (TW)
Chih-Kai Kang of Tainan City (TW)
Wen-Kai Lin of Yilan County (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
This abstract first appeared for US patent application 18372130 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Original Abstract Submitted
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a transistor region and an one time programmable (OTP) capacitor region, forming a first fin-shaped structure on the transistor region and a second fin-shaped structure on the OTP capacitor region, and then performing an oxidation process to form a gate oxide layer on the first fin-shaped structure and the second fin-shaped structure. Preferably, the first fin-shaped structure and the second fin-shaped structure have different shapes under a cross-section perspective.