18370402. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME (UNITED MICROELECTRONICS CORP.)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Chang-Yih Chen of Tainan City (TW)
Kuo-Hsing Lee of Hsinchu County (TW)
Chun-Hsien Lin of Tainan City (TW)
Kun-Szu Tseng of Tainan City (TW)
Sheng-Yuan Hsueh of Tainan City (TW)
Yao-Jhan Wang of Tainan City (TW)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
This abstract first appeared for US patent application 18370402 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Original Abstract Submitted
A method for fabricating a semiconductor device includes the steps of first providing a substrate having a non-metal-oxide semiconductor capacitor (non-MOSCAP) region and a MOSCAP region, forming a fin-shaped structure on the MOSCAP region, forming a shallow trench isolation (STI) around the substrate and the fin-shaped structure, performing a first etching process to remove part of the STI on the MOSCAP region, and then performing a second etching process to remove part of the STI on the non-MOSCAP region and the MOSCAP region.