18369755. SEMICONDUCTOR WAFER FABRICATION WITH POLYIMIDE TO GRAPHENE CONVERSION (NXP USA, Inc.)
SEMICONDUCTOR WAFER FABRICATION WITH POLYIMIDE TO GRAPHENE CONVERSION
Organization Name
Inventor(s)
Douglas Michael Reber of Austin TX US
SEMICONDUCTOR WAFER FABRICATION WITH POLYIMIDE TO GRAPHENE CONVERSION
This abstract first appeared for US patent application 18369755 titled 'SEMICONDUCTOR WAFER FABRICATION WITH POLYIMIDE TO GRAPHENE CONVERSION
Original Abstract Submitted
A back-end-of-line integrated circuit interconnect device is formed on an integrated circuit structure having a first dielectric layer formed over a first conductive contact layer by forming an interconnect opening in the first dielectric layer which exposes at least a portion of the first conductive contact layer, filling the interconnect opening in the first dielectric layer with one or more polyimide layers in contact the first conductive contact layer; and applying a laser light source to directly convert the one or more polyimide layers to form a graphene interconnect structure in the first dielectric layer which is directly, electrically connected to the first conductive contact layer.