18368907. MEMORY DEVICE AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
MEMORY DEVICE AND OPERATING METHOD THEREOF
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MEMORY DEVICE AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18368907 titled 'MEMORY DEVICE AND OPERATING METHOD THEREOF
The memory device described in the patent application includes a memory cell array with multiple memory cells connected to word lines and bit lines, a voltage generator that outputs a temperature-dependent first voltage, a constant second voltage, and a first reference voltage applied to at least one line, and a temperature compensation circuit that generates a compensation offset voltage based on the first and second voltages.
- The memory device features a voltage generator that adjusts its output based on temperature, ensuring stable performance in varying environmental conditions.
- A temperature compensation circuit is employed to generate a compensation offset voltage, which helps maintain accurate reference voltages for reliable operation.
- By combining temperature-dependent and constant voltages, the memory device can adapt to different temperature ranges while maintaining consistent performance.
- The use of a temperature compensation circuit enhances the accuracy and reliability of the memory device, making it suitable for a wide range of applications.
- Overall, this innovation improves the functionality and efficiency of memory devices in various temperature environments.
Potential Applications: - This technology can be applied in electronic devices where memory performance is critical, such as smartphones, tablets, and computers. - Industrial applications that require reliable memory storage in harsh temperature conditions could benefit from this innovation. - Automotive systems, medical devices, and aerospace equipment are other potential areas where this technology could be utilized.
Problems Solved: - Ensures stable memory performance in varying temperature environments. - Improves the accuracy of reference voltages for memory operations. - Enhances the reliability of memory devices in challenging conditions.
Benefits: - Increased reliability and accuracy of memory operations. - Improved performance consistency across different temperature ranges. - Enhanced durability and functionality of memory devices in various applications.
Commercial Applications: Title: Temperature-Compensated Memory Device for Enhanced Performance This technology has significant commercial potential in the consumer electronics, industrial, automotive, medical, and aerospace sectors. By offering reliable memory performance in diverse temperature conditions, this innovation can improve the overall efficiency and longevity of electronic devices and systems.
Questions about Temperature-Compensated Memory Device: 1. How does the temperature compensation circuit in the memory device work? 2. What are the key advantages of using temperature-dependent and constant voltages in memory devices?
Original Abstract Submitted
A memory device includes a memory cell array including a plurality of memory cells connected to a plurality of word lines and a plurality of bit lines, a voltage generator configured to output a first voltage that varies according to temperature of the memory device, a second voltage that is constant regardless of the temperature, and a first reference voltage applied to at least one line among the plurality of word lines and the plurality of bit lines, and a temperature compensation circuit configured to generate a compensation offset voltage based on the first voltage and the second voltage, and output a second reference voltage based on the first reference voltage and the compensation offset voltage.