SCALABLE THIN-FILM RESISTOR STRUCTURE

Organization Name

International Business Machines Corporation

Inventor(s)

Ashim Dutta of Clifton Park NY (US)

Shravana Kumar Katakam of Lehi UT (US)

Chih-Chao Yang of Glenmont NY (US)

SCALABLE THIN-FILM RESISTOR STRUCTURE

This abstract first appeared for US patent application 18367553 titled 'SCALABLE THIN-FILM RESISTOR STRUCTURE

Original Abstract Submitted

A semiconductor device includes a first metallization level comprising a first electrode and a second metallization level comprising a second electrode. A resistor structure is disposed between the first electrode and the second electrode. The resistor structure comprises a first resistor element comprising a first side and a second side, wherein the first side has a larger area than an area of the second side, and a second resistor element stacked on the first resistor element, wherein the second resistor element contacts the second side of the first resistor element.