18367315. METHOD OF SURFACE MODIFICATION FOR WAFER BONDING (Tokyo Electron Limited)

METHOD OF SURFACE MODIFICATION FOR WAFER BONDING

Organization Name

Tokyo Electron Limited

Inventor(s)

Soo Doo Chae of Albany NY (US)

David L. O'meara of Albany NY (US)

Matthew Baron of Albany NY (US)

Hojin Kim of Albany NY (US)

Arkalgud Sitaram of Albany NY (US)

METHOD OF SURFACE MODIFICATION FOR WAFER BONDING

This abstract first appeared for US patent application 18367315 titled 'METHOD OF SURFACE MODIFICATION FOR WAFER BONDING

Original Abstract Submitted

A method includes providing a first substrate having a first bonding surface. The method includes providing a second substrate having a second bonding surface. The method includes coupling a metal-containing precursor to the first bonding surface and the second bonding surface. The method includes activating the metal-containing precursor on the first bonding surface and the second bonding surface. The method further includes chemically reacting the activated metal-containing precursor on the first bonding surface and the second bonding surface to form an interface between the first substrate and the second substrate.