SEMICONDUCTOR CONTACT STRUCTURES AND METHODS

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Huan-Chieh Su of Tianzhong Township (TW)

Cheng-Chi Chuang of New Taipei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

Chun-Yuan Chen of Hsinchu (TW)

Sheng-Tsung Wang of Hsinchu (TW)

Meng-Huan Jao of Taichung City (TW)

SEMICONDUCTOR CONTACT STRUCTURES AND METHODS - A simplified explanation of the abstract

This abstract first appeared for US patent application 18354364 titled 'SEMICONDUCTOR CONTACT STRUCTURES AND METHODS

The method described in the patent application involves several steps to create a structure in a semiconductor device:

Forming a fin protruding from a substrate
Forming a gate structure extending over the fin
Forming a source/drain region in the fin adjacent to the gate structure
Forming a first isolation region over the source/drain region
Etching the first isolation region to create a first recess
Depositing layers of mask material and etching to create a second recess exposing the source/drain region
Depositing a conductive material in the second recess

Key Features and Innovation: - Utilizes a multi-layer mask approach to create precise recesses in the semiconductor device - Allows for better control and accuracy in the formation of the structure - Enhances the performance and efficiency of the semiconductor device

Potential Applications: - Semiconductor manufacturing - Integrated circuits - Microelectronics

Problems Solved: - Improves the precision and accuracy of creating recesses in semiconductor devices - Enhances the overall performance and efficiency of the devices

Benefits: - Increased control over device structure - Improved device performance - Enhanced efficiency in semiconductor manufacturing processes

Commercial Applications: - This technology can be applied in the production of various semiconductor devices, leading to more advanced and efficient electronic products in the market.

Questions about the technology: 1. How does the multi-layer mask approach improve the precision of creating recesses in the semiconductor device? 2. What are the potential benefits of using this method in semiconductor manufacturing processes?

Frequently Updated Research: - Stay updated on the latest advancements in semiconductor manufacturing techniques to further enhance the efficiency and performance of devices.

Original Abstract Submitted

A method includes forming a fin protruding from a substrate; forming a gate structure extending over the fin; forming a source/drain region in the fin adjacent the gate structure; forming a first isolation region over the source/drain region; forming a first mask layer over the gate structure; etching the first isolation region using the first mask layer as an etch mask to form a first recess; conformally depositing a second mask layer over the first mask layer and within the first recess; depositing a third mask layer over the second mask layer; etching the third mask layer, the second mask layer, and the first isolation region to form a second recess that exposes the source./drain region; and depositing a conductive material in the second recess.