SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

Organization Name

Inventor(s)

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18350754 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

The semiconductor device described in the abstract includes highly integrated memory cells and is fabricated using a specific method.

Forming a semiconductor layer pattern over a lower structure
Creating a gate dielectric layer to cover the semiconductor layer pattern
Applying a conductive layer around the semiconductor layer pattern
Selectively etching the conductive layer to form a pair of horizontal conductive layer patterns on the upper and lower surfaces of the semiconductor layer pattern
Selectively recessing the semiconductor layer pattern to create a horizontal layer with a side portion between the pair of horizontal conductive layer patterns
Recessing the pair of horizontal conductive layer patterns to form a pair of horizontal conductive lines on the upper and lower surfaces of the horizontal layer

Potential Applications: - Memory devices - Integrated circuits - Semiconductor technology

Problems Solved: - Increasing memory cell integration - Enhancing semiconductor device performance - Improving fabrication processes

Benefits: - Higher memory density - Improved device efficiency - Enhanced overall performance

Commercial Applications: Title: Advanced Semiconductor Memory Device for High-Performance Applications This technology can be utilized in various commercial applications such as: - Consumer electronics - Data storage systems - Automotive electronics

Questions about the technology: 1. How does the fabrication method contribute to the efficiency of the semiconductor device? 2. What sets this highly integrated memory cell design apart from traditional memory cell structures?

Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the performance and integration of memory cells in semiconductor devices. Stay updated on the latest advancements in this field for potential breakthroughs in memory technology.

Original Abstract Submitted

A semiconductor device including highly integrated memory cells and a method for fabricating the same in which the method includes: forming a semiconductor layer pattern over a lower structure; forming a gate dielectric layer covering the semiconductor layer pattern; forming a conductive layer surrounding the semiconductor layer pattern over the gate dielectric layer; forming a pair of horizontal conductive layer patterns respectively disposed over an upper surface and a lower surface of the semiconductor layer pattern by selectively etching the conductive layer; forming a horizontal layer having a side portion between the pair of horizontal conductive layer patterns by selectively recessing the semiconductor layer pattern; and forming a pair of horizontal conductive lines respectively disposed over an upper surface and a lower surface of the horizontal layer by recessing the pair of horizontal conductive layer patterns.