18347813. SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Yi-Hsiu Chen of Taipei City (TW)
Pinyen Lin of Rochester NY (US)
Wei-Yen Woon of Taoyuan City (TW)
SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION
This abstract first appeared for US patent application 18347813 titled 'SELF-ALIGNED PATTERNING LAYER FOR METAL GATE FORMATION
Original Abstract Submitted
Methods of forming a metal gate structure of a stacked multi-gate device are provided. A method according to the present disclosure includes depositing a titanium nitride (TiN) layer over a channel region that includes bottom channel layers and top channel layers, depositing a dummy fill layer to cover sidewalls of the bottom channel layers, after the depositing of the dummy fill layer, selectively forming a blocking layer over the TiN layer along sidewalls of the top channel layers, selectively removing the dummy fill layer to release the bottom channel layers, selectively depositing a first work function metal layer to wrap around each of the bottom channel layers, forming a gate isolation layer over a top surface of the first work function metal layer, removing the blocking layer, releasing the top channel layers, and selectively depositing a second work function metal layer to wrap around each of the top channel layers.