IC MEMORY DEVICE IMPLEMENTING AN IMPLY FUNCTION

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Katherine H. Chiang of New Taipei City (TW)

IC MEMORY DEVICE IMPLEMENTING AN IMPLY FUNCTION

This abstract first appeared for US patent application 18346981 titled 'IC MEMORY DEVICE IMPLEMENTING AN IMPLY FUNCTION

Original Abstract Submitted

Some embodiments relate to an integrated circuit including first and second charge-trapping devices and a control circuit. The first charge-trapping device includes a first charge-trapping structure arranged over a substrate between a first gate structure and a first channel region. The second charge-trapping device is coupled in series with the first charge-trapping device and includes a second charge-trapping structure arranged over the substrate between a second gate structure and a second channel region. The control circuit is coupled to the first and second gate structures and is configured to store a first input of an IMPLY operation as a stored value of the first charge-trapping device, store a second input of the IMPLY operation as a stored value of the second charge-trapping device, and update the stored value of the second charge-trapping device based on the stored value of the first charge-trapping device to perform the IMPLY operation.