METHOD OF FORMING MARK ON SEMICONDUCTOR DEVICE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor(s)

METHOD OF FORMING MARK ON SEMICONDUCTOR DEVICE

This abstract first appeared for US patent application 18346840 titled 'METHOD OF FORMING MARK ON SEMICONDUCTOR DEVICE

Original Abstract Submitted

The present disclosure provides a method for manufacturing a semiconductor device having a mark. The method includes: providing a substrate including a device region and a peripheral region adjacent to the device region; forming an interconnect layer over the substrate; depositing a first dielectric layer on the interconnect layer; forming a redistribution layer (RDL) over the first dielectric layer in the device region; depositing a second dielectric layer on the RDL in the device region and the first dielectric layer in the device region and the peripheral region; and removing portions of the second dielectric layer, the first dielectric layer and the interconnect structure in the peripheral region to form the mark in the peripheral region.