SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

This abstract first appeared for US patent application 18346772 titled 'SEMICONDUCTOR DEVICE HAVING LOW-RESISTANCE GATE CONNECTOR

Original Abstract Submitted

Semiconductor devices are provided. In one example, a semiconductor device includes: a substrate, a first circuit region and a second circuit region extending in a first direction, and a gate structure extending in a second direction that is substantially perpendicular to the first direction. The gate structure further includes: two gate electrode sections respectively located in the first and second circuit regions, and a low-resistance section between and interconnecting the two gate electrode sections. The two gate electrode sections are configured as gate electrodes for two transistors respectively located in the first and second circuit regions. The two gate electrodes have a first width (W) along the first direction, the low-resistance section has a second width (W) along the first direction, and a ratio of W to W(W/W) is at least 1.1.