18337281. METHOD OF DEPOSITION IN HIGH ASPECT RATIO (HAR) FEATURES (Tokyo Electron Limited)
METHOD OF DEPOSITION IN HIGH ASPECT RATIO (HAR) FEATURES
Organization Name
Inventor(s)
Shihsheng Chang of Albany NY (US)
David L. O'meara of Albany NY (US)
Jeffrey Shearer of Albany NY (US)
METHOD OF DEPOSITION IN HIGH ASPECT RATIO (HAR) FEATURES
This abstract first appeared for US patent application 18337281 titled 'METHOD OF DEPOSITION IN HIGH ASPECT RATIO (HAR) FEATURES
Original Abstract Submitted
A method for processing a substrate that includes: patterning a carbon-based hardmask layer over a dielectric layer to form a first recess in the carbon-based hardmask layer, the first recess having a tapered profile such that a width of the first recess at a first height is greater than a width of the first recess at a second height that is lower than the first height; depositing a metal-containing layer over the patterned carbon-based hardmask layer, the metal-containing layer being physically in contact with sidewalls of the patterned carbon-based hardmask layer in the first recess, the metal-containing layer being thicker at the first height than at the second height; and etching the dielectric layer using the patterned carbon-based hardmask layer as an etch mask by an anisotropic plasma etch process to form a second recess in the dielectric layer.