18337232. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE simplified abstract (SK hynix Inc.)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Won Geun Choi of Icheon-si Gyeonggi-do (KR)
Rho Gyu Kwak of Icheon-si Gyeonggi-do (KR)
In Su Park of Icheon-si Gyeonggi-do (KR)
Jung Shik Jang of Icheon-si Gyeonggi-do (KR)
Jung Dal Choi of Icheon-si Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18337232 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Simplified Explanation: The semiconductor device described in the patent application features a gate structure with alternating conductive and insulating layers, as well as an insulating core with a long and short axis. Surrounding the insulating core are first and second channel patterns facing each other along the long axis, along with a barrier pattern of varying thicknesses along the long and short axes.
Key Features and Innovation:
- Gate structure with alternating conductive and insulating layers
- Insulating core with long and short axes
- First and second channel patterns surrounding the insulating core
- Barrier pattern with varying thicknesses along the long and short axes
Potential Applications: The technology could be applied in semiconductor manufacturing processes, particularly in the development of advanced gate structures for improved performance and efficiency.
Problems Solved: This innovation addresses the need for more sophisticated gate structures in semiconductor devices to enhance their functionality and overall performance.
Benefits:
- Enhanced performance and efficiency in semiconductor devices
- Improved gate structure design for better functionality
Commercial Applications: The technology could have significant commercial applications in the semiconductor industry, leading to the development of more advanced and efficient electronic devices.
Prior Art: Readers interested in exploring prior art related to this technology could start by researching patents and publications in the field of semiconductor device manufacturing and design.
Frequently Updated Research: Stay updated on the latest advancements in semiconductor device technology and manufacturing processes to understand how this innovation fits into the current landscape.
Questions about Semiconductor Device Technology: 1. What are the potential implications of this technology on the semiconductor industry? 2. How does this innovation compare to existing gate structure designs in semiconductor devices?
Original Abstract Submitted
A semiconductor device includes a gate structure including conductive layers and insulating layers that are alternately stacked. The semiconductor device also includes an insulating core located in the gate structure and including a long axis and a short axis. The semiconductor device further includes a first channel pattern and a second channel pattern surrounding the insulating core and located to face each other along the long axis. The semiconductor device additionally includes a barrier pattern surrounding the first channel pattern and the second channel pattern and having different thicknesses along the long axis and the short axis.
