METAL-INSULATOR-METAL STRUCTURE AND METHODS THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chia-Yueh Chou of Taoyuan City (TW)

Wen-Tzu Chen of Taoyuan City (TW)

Wen-Ling Chang of Miaoli County (TW)

Hsiang-Ku Shen of Hsinchu City (TW)

Alvin Universe Tang of Hsinchu City (TW)

Chun-Hsiu Chiang of Taipei City (TW)

Shin-Hung Tsai of Hsinchu City (TW)

Kun-Yu Lee of Tainan City (TW)

Cheng-Hao Hou of Hsinchu City (TW)

Dian-Hau Chen of Hsinchu (TW)

Li-Chung Yu of Kaohsiung City (TW)

METAL-INSULATOR-METAL STRUCTURE AND METHODS THEREOF

This abstract first appeared for US patent application 18335754 titled 'METAL-INSULATOR-METAL STRUCTURE AND METHODS THEREOF

Original Abstract Submitted

A method and semiconductor device including a substrate having one or more semiconductor devices. In some embodiments, the device further includes a first passivation layer disposed over the one or more semiconductor devices, and a metal-insulator-metal (MIM) capacitor structure formed over the first passivation layer. In some embodiments, the MIM capacitor structure includes a first conductor plate layer, an insulator layer on the first conductor plate layer, and a second conductor plate layer on the insulator layer. In some examples, the insulator layer includes a metal oxide sandwich structure.