18324150. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SK hynix Inc.)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
Organization Name
Inventor(s)
Seung Bum Kim of Gyeonggi-do (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18324150 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The semiconductor device described in the abstract consists of a vertical conductive line, a horizontal layer oriented horizontally from the vertical conductive line, a horizontal conductive line crossing the horizontal layer, and a data storage element in contact with the horizontal layer.
- The data storage element includes a first electrode with a first cylinder in contact with an edge of the upper portion of the horizontal layer and a second cylinder in contact with an edge of the lower portion of the horizontal layer.
- A second electrode is disposed over the first electrode, with a dielectric layer between them.
- The second electrode features a sharing portion in a gap between the first and second cylinders, inner portions on the inner surfaces of the cylinders, and outer portions over the first cylinder and below the second cylinder.
Potential Applications: - This technology could be used in memory storage devices for electronic devices. - It may find applications in data centers for efficient data storage solutions.
Problems Solved: - Provides a compact and efficient data storage solution for semiconductor devices. - Enhances the performance and storage capacity of electronic devices.
Benefits: - Improved data storage capabilities. - Enhanced efficiency and performance of semiconductor devices.
Commercial Applications: Title: Advanced Data Storage Technology for Semiconductor Devices This technology can be utilized in the development of next-generation memory storage devices for consumer electronics, data centers, and other high-tech applications. The compact design and enhanced storage capacity make it a valuable innovation in the semiconductor industry.
Questions about the technology: 1. How does this technology improve data storage efficiency in semiconductor devices? 2. What are the potential market implications of implementing this advanced data storage technology in electronic devices?
Original Abstract Submitted
A semiconductor device includes: a vertical conductive line; a horizontal layer oriented horizontally from the vertical conductive line; a horizontal conductive line crossing the horizontal layer; and a data storage element in contact with the horizontal layer, wherein the data storage element includes: a first electrode including a first cylinder that is in contact with an edge of an upper portion of the horizontal layer and a second cylinder that is in contact with an edge of a lower portion of the horizontal layer; a second electrode disposed over the first electrode; and a dielectric layer between the first electrode and the second electrode, and the second electrode includes: a sharing portion disposed in a gap between the first cylinder and the second cylinder; inner portions disposed on an inner surface of the first cylinder and an inner surface of the second cylinder; and outer portions disposed over the first cylinder and below the second cylinder.
