18317362. MEMORY DEVICE AND METHOD OF OPERATING THE SAME simplified abstract (SK hynix Inc.)
MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Organization Name
Inventor(s)
Hyun Seob Shin of Icheon-si Gyeonggi-do (KR)
Dong Hun Kwak of Icheon-si Gyeonggi-do (KR)
MEMORY DEVICE AND METHOD OF OPERATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18317362 titled 'MEMORY DEVICE AND METHOD OF OPERATING THE SAME
Simplified Explanation
The present technology is related to an electronic device with a memory device that includes memory cells, a read and write circuit, and a program controller. The memory cells are connected to channels passing through word lines, and the program controller controls the read and write circuit to perform sensing operations on different sets of memory cells during various sensing time periods.
- Memory device with memory cells, read and write circuit, and program controller
- Memory cells connected to channels passing through word lines
- Program controller controls sensing operations on different sets of memory cells during various sensing time periods
- First memory cells connected to first channels adjacent to a plurality of slits
- Second memory cells connected to second channels farther from the plurality of slits than the first channels
Potential Applications
The technology can be applied in various electronic devices such as smartphones, tablets, and computers for efficient memory storage and retrieval.
Problems Solved
This technology solves the problem of optimizing memory access and storage in electronic devices, improving overall performance and speed.
Benefits
The benefits of this technology include faster data access, increased memory storage capacity, and improved overall efficiency of electronic devices.
Potential Commercial Applications
- "Enhancing Memory Performance in Electronic Devices: Applications and Benefits"
Possible Prior Art
There may be prior art related to memory devices with optimized memory cell configurations for improved performance and efficiency.
Unanswered Questions
How does this technology compare to existing memory devices in terms of speed and efficiency?
The article does not provide a direct comparison to existing memory devices in terms of speed and efficiency.
What are the potential limitations or drawbacks of implementing this technology in electronic devices?
The article does not address any potential limitations or drawbacks of implementing this technology in electronic devices.
Original Abstract Submitted
The present technology relates to an electronic device. According to the present technology, a memory device may include a plurality of memory cells, a read and write circuit, and a program controller. The plurality of memory cells may be connected to a plurality of channels passing through a plurality of word lines. The program controller may control the read and write circuit to perform a sensing operation on first memory cells and second memory cells among the plurality of memory cells during differently set sensing time periods. The first memory cells may be connected to first channels adjacent to a plurality of slits, among a plurality of channels separated by the plurality of slits. The second memory cells may be connected to second channels farther from the plurality of slits than the first channels.
